High Purity Tungsten Ion Implantation Components Description
Because tungsten material has the advantages of high density, high melting point, stable high temperature chemical properties, small thermal denaturation, good thermal conductivity and long service life, it has become the first choice for ion sources and consumables for ion implanters in the semiconductor industry. High Purity Tungsten Ion Implantation Components are made of tungsten or tungsten alloy materials through powder metallurgy process, with outstanding corrosion resistance and oxidation resistance, high thermal and electrical conductivity, high strength and hardness, and extremely low vapor pressure. The advantages of good creep resistance and wear resistance ensure the accuracy and purity of ion implantation. High Purity Tungsten Ion Implantation Components are mainly used for ion implantation processes in semiconductor, metal processing, ceramics and other industries, and can be widely used in aerospace, scientific experiments, metal processing, high temperature furnace, sapphire refining industry and ceramic industry.
High Purity Tungsten Ion Implantation Components Specifications:
| Grade | WMo,WNiFe |
| Technique | Rolling,Forging,Flattening,Annealing,Machining |
| Melting Point | 3410℃ |
| Purity | ≥95% |
| Size and Shape | According to drawings |
| Maximum Outside Diameter | 800mm |
| Density | 19.3g/cm3 |
| Surface | Polishing,Chemical Cleaning,Powder coating, etc. |
| Standard | ASTM B777,DIN,GB,ISO,JIS |
| Certification | ISO900 |
High Purity Tungsten Ion Implantation Components Picture
